(PDF) BFR360T Datasheet - NPN Silicon RF Transistor

Número de pieza	BFR360T
Descripción	NPN Silicon RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BFR360T NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 3 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360T Marking Pin Configuration FBs 1=B 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 81°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value 325 Unit V mA mW °C Unit K/W 1 Jun-16-2003 1 page

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PDF BFR360T Data sheet ( Hoja de datos )