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PDF BFR360L3 Data sheet ( Hoja de datos )
| Número de pieza | BFR360L3 | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation
• For low noise amplifiers
• For Oscillators up to 3.5 GHz and Pout > 10 dBm
• Low noise figure: 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
BFR360L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360L3
Marking
Pin Configuration
FB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 104°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
35
4
210
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
220
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-09-03
1 page  
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8 GHz
30
dBm
20
15
6V
10 4V
3V
2V
5 1V
0
-50 5 10 15 20 25 30 mA 40
IC
Power gain Gma, Gms = ƒ(IC)
VCE = 3 V
f = parameter in GHz
24
dB
0.9GHz
20
18
16
1.8GHz
14
2.4GHz
12
3GHz
10
4GHz
8
6
40 5 10 15 20 25 30 35 dB 45
IC
BFR360L3
Transition frequency fT= ƒ(IC)
f = 1 GHz
VCE = parameter
18
GHz
14
5V
12 3V
10 2V
8
1V
6
0.7V
4
2
00 5 10 15 20 25 30 A 40
IC
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
18
dB 5V
3V
14
2V
12
1V
10
0.7V
80 5 10 15 20 25 30 mA 40
IC
5 2013-09-03
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFR360L3.PDF ] | |
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