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PDF BFR360F Data sheet ( Hoja de datos )
| Número de pieza | BFR360F | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5 V supply voltage
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFR360F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 98°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
35
4
210
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
250
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06
1 page  
Power gain Gma, Gms = ƒ(IC)
f = 0.9GHz
VCE = parameter
24
dB
5V
22
3V
21
2V
20
19
18
17 1V
16
15 0.7V
14
13
120 5 10 15 20 25 30 mA 40
IC
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
BFR360F
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
18
dB 5V
3V
14 2V
12 1V
10
0.7V
80 5 10 15 20 25 30 mA 40
IC
Insertion Power Gain |S21|² = ƒ(f)
VCE = parameter
49
dB
Ic = 15mA
39
34
29
24
19
14
5V
2V
1V
9 0.7V
40 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
36
dB
Ic = 15mA
28
5V
24 2V
1V
20 0.7V
16
12
8
4
00 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
5 2013-11-06
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BFR360F.PDF ] | |
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