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PDF BFR193TW Data sheet ( Hoja de datos )
| Número de pieza | BFR193TW | |
| Descripción | Silicon NPN Planar RF Transistor | |
| Fabricantes | Vishay Telefunken | |
| Logotipo |  |
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BFR193T/BFR193TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
D Low noise figure
D High transition frequency fT = 8 GHz
D Excellent large-signal behaviour
11
94 9280
23
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 45 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
80
420
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions
Junction ambient mounted on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35mm Cu
Symbol
RthJA
Value
250
Unit
K/W
Document Number
Rev. 2, 14-Feb-00
www.vishay.de • FaxBack +1-408-970-5600
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BFR193TW.PDF ] | |
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