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PDF BFR182W Data sheet ( Hoja de datos )

Número de pieza BFR182W
Descripción Low Noise Silicon Bipolar RF Transistor
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BFR182W Hoja de datos, Descripción, Manual

Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
BFR182W
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR182W
Marking
Pin Configuration
RGs
1=B
2=E
3=C
Package
SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 90 °C
Junction temperature
Ambient temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
12
20
20
2
35
4
250
150
-65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
240
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2014-04-07

1 page




BFR182W pdf
Package SOT323
BFR182W
5 2014-04-07

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