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PDF BFR181W Data sheet ( Hoja de datos )
| Número de pieza | BFR181W | |
| Descripción | NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12mA
• fT = 8GHz
F = 1.45dB at 900MHz
BFR 181W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 181W RFs
Q62702-F1491
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 90 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
20
2
175
150
- 65 ... + 150
- 65 ... + 150
≤ 345
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
1 page  
BFR 181W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
200
mW
Ptot 160
140
TS
120
100
80
TA
60
40
20
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJS K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-11-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFR181W.PDF ] | |
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