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PDF BR101 Data sheet ( Hoja de datos )
| Número de pieza | BR101 | |
| Descripción | Silicon controlled switch | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BR101
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 24
1 page  
Philips Semiconductors
Silicon controlled switch
Product specification
BR101
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
NPN transistor
ICER
IEBO
VCEsat
VBEsat
hFE
fT
Cc
Ce
collector cut-off current
VCE = 50 V; RBE = 10 kΩ
−
VCE = 50 V; RBE = 10 kΩ; Tj = 150 °C −
emitter cut-off current
IC = 0; VEB = 5 V; Tj = 150 °C
−
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
base-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
DC current gain
IC = 10 mA; VCE = 2 V
50
transition frequency
IC = 10 mA; VCE = 2 V
−
collector capacitance
IE = ie = 0; VCB = 20 V; f = 1 MHz
−
emitter capacitance
IC = ic = 0; VEB = 1 V
−
− 500 nA
− 50 µA
− 50 µA
− 500 mV
− 900 mV
−−
300 −
MHz
− 5 pF
− 25 pF
PNP transistor
ICEO
IEBO
hFE
collector cut-off current
emitter cut-off current
DC current gain
IB = 0; VCE = −50 V; Tj = 150 °C
IC = 0; VEB = −50 V; Tj = 150 °C
IE = 1 mA; VCB = 0 V
−−
−−
0.25 −
−50 µA
−50 µA
2.5
Combined device
VAK forward on-state voltage
IH holding current
RKG-K = 10 kΩ
IA = 50 mA; IAG = 0
IA = 1 mA; IAG = 10 mA
RKG-K = 10 kΩ; IAG = 10 mA;
VBB = −2 V
− − 1.4 V
− − 1.2 V
− − 1 mA
1997 Jul 24
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BR101.PDF ] | |
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