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PDF BUZ104 Data sheet ( Hoja de datos )

Número de pieza BUZ104
Descripción SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BUZ104 Hoja de datos, Descripción, Manual

BUZ 104
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 104
VDS
50 V
ID
17.5 A
RDS(on)
0.1
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 17.5 A, VDD = 25 V, RGS = 25
L = 114 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1353-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
17.5
Unit
A
70
mJ
35
kV/µs
6
± 20
60
-55 ... + 175
-55 ... + 175
2.5
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 page




BUZ104 pdf
BUZ 104
Power dissipation
Ptot = ƒ(TC)
65
W
55
Ptot 50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
tp = 20.0µs
I
DA
100 µs
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
18
A
ID 14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 1
1 ms
10 ms
10 0
10 0
10 1
Semiconductor Group
DC
V 10 2
VDS
5
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
07/96

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