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PDF BUZ103 Data sheet ( Hoja de datos )

Número de pieza BUZ103
Descripción SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BUZ103 Hoja de datos, Descripción, Manual

BUZ 103
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 103
VDS
50 V
ID
40 A
RDS(on)
0.04
Maximum Ratings
Parameter
Continuous drain current
TC = 23 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25
L = 63 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1352-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
40
Unit
A
160
mJ
100
kV/µs
6
± 20
120
-55 ... + 175
-55 ... + 175
1.25
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 page




BUZ103 pdf
BUZ 103
Power dissipation
Ptot = ƒ(TC)
130
W
110
Ptot 100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
45
A
ID 35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
A
I
D
10 2
/ID
= V DS
R DS(on)
10 1
tp = 11.0µs
100 µs
1 ms
10 ms
10 0
10 0
DC
10 1 V 10 2
VDS
K/W
Z
thJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96

5 Page










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