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PDF BUT11AF Data sheet ( Hoja de datos )

Número de pieza BUT11AF
Descripción POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS
Fabricantes Motorola Inc 
Logotipo Motorola  Inc Logotipo



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No Preview Available ! BUT11AF Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT11AF/D
Full Pak
High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching power supplies in a
wide range of end use applications. This device combines the latest state of the art
bipolar fabrication techniques to provide excellent switching, high voltage capability
and low saturation voltage.
1000 Volt VCES Rating
Low Base Drive Requirements
Isolated Overmold Package
Improved System Efficiency
No Isolating Washers Required
Reduced System Cost
High Isolation Voltage Capability (4500 VRMS)
BUT11AF
POWER TRANSISTOR
5.0 AMPERES
450 VOLTS
40 WATTS
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
RMS Isolation Voltage (For 1 sec,
TA = 25°C, Rel. Humidity < 30%)
Per Figure 7
Per Figure 8
Per Figure 9
Collector Current — Continuous
Collector Current — Pulsed (1)
Base Current — Continuous
Base Current — Pulsed (1)
Total Power Dissipation @ TC = 25°C*
Derated above 25°C
Operating and Storage Temperature Range
VCEO(sus)
VCES
VEBO
VISOL1
VISOL2
VISOL3
IC
ICM
IB
IBM
PD
TJ, Tstg
450
1000
9.0
4500
3500
2500
5.0
10
2.0
4.0
40
0.32
– 65 to +150
Vdc
Vdc
Vdc
V
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case*
RθJC
3.125
°C/W
Maximum Lead Temperature for soldering purposes
1/8from case for 5 sec.
TL 260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
* Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),
the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.
Full Pak is a registered trademark of Motorola Inc.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

1 page




BUT11AF pdf
PACKAGE DIMENSIONS
BUT11AF
–B–
F
Q
A
123
H
K
–Y–
–T–
SEATING
PLANE
C
S
U
G
N
L
D 3 PL
0.25 (0.010) M B M Y
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.621 0.629
B 0.394 0.402
C 0.181 0.189
D 0.026 0.034
F 0.121 0.129
G 0.100 BSC
H 0.123 0.129
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.200 BSC
Q 0.126 0.134
R 0.107 0.111
S 0.096 0.104
U 0.259 0.267
MILLIMETERS
MIN MAX
15.78 15.97
10.01 10.21
4.60 4.80
0.67 0.86
3.08 3.27
2.54 BSC
3.13 3.27
0.46 0.64
12.70 14.27
1.14 1.52
5.08 BSC
3.21 3.40
2.72 2.81
2.44 2.64
6.58 6.78
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 221D–02
TO–220 TYPE
ISSUE D
Motorola Bipolar Power Transistor Device Data
5

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