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PDF BUT11A Data sheet ( Hoja de datos )

Número de pieza BUT11A
Descripción High Voltage Power Switching Applications
Fabricantes Fairchild Semiconductor 
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BUT11/11A
High Voltage Power Switching Applications
NPN Silicon Transistor
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BUT11
: BUT11A
VCEO
Collector-Emitter Voltage
: BUT11
: BUT11A
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
850
1000
400
450
9
5
10
2
4
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BUT11
: BUT11A
IC = 100mA, IB = 0
ICES
Collector Cut-off Current
: BUT11
: BUT11A
VCE = 850V, VBE = 0
IEBO
VCE(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BUT11
: BUT11A
VBE(sat)
Base-Emitter Saturation Voltage
: BUT11
: BUT11A
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VBE = 9V, IC = 0
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL = 100
Min. Typ. Max. Units
400 V
450 V
1 mA
1 mA
10 mA
1.5 V
1.5 V
1.3 V
1.3 V
1 µs
4 µs
0.8 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
1.25
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, August 2001

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