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PDF BUT11A Data sheet ( Hoja de datos )

Número de pieza BUT11A
Descripción Silicon diffused power transistors
Fabricantes NXP Semiconductors　
Logotipo NXP Semiconductors Logotipo



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DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13

1 page




BUT11A pdf
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT11; BUT11A
handbook, full pagewidth
102
IC
(A)
ICM max
10
IC max
(1)
1
δ = 0.01
II
tp =
20 µs
50 µs
100 µs
MGB950
10−1
10−2
10−3
10
I (2)
200 µs
500 µs
1 ms
2 ms
10 ms
DC
BUT11
BUT11A
III
IV
102 103
VCE (V)
104
Tmb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 13
4

5 Page





BUT11A arduino
Philips Semiconductors
Silicon diffused power transistors
NOTES
Product specification
BUT11; BUT11A
1997 Aug 13
10

11 Page







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