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PDF BUT11 Data sheet ( Hoja de datos )
| Número de pieza | BUT11 | |
| Descripción | NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS) | |
| Fabricantes | Wing Shing Computer Components | |
| Logotipo |  |
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BUT11/11A
HIGH VOLTAGE POWER
SWITCHING APPLICATIONS
NPN SILICON TRANSISTOR
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°c)
Characteristic
Collector-Emitter Voltage:BUT11
:BUT11A
Collector-Emitter Voltage:BUT11
:BUT11A
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
Symbol Rating
VCES
VCEO
VEBO
IC
IC
IB
IB
PC
Tj
Tstg
850
1000
400
450
9
5
10
2
4
100
150
-65~150
Unit
V
V
V
V
V
A
A
A
A
W
°c
°c
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Characterristic
Collector Emitter Sustaining Voltage :BUT11
:BUTIIA
Collector Cutoff Current
:BUT11
:BUTIIA
Emitter Cutoff Current
Collector Emitter Saturation Voltage :BUT11
:BUTIIA
Base- Emitter Saturation Voltage
:BUT11
:BUTIIA
Turn-On Time
Storage Time
Fall Time
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Symbol
Test Condition Min Typ Max
VCEO(SUS)
ICES
IEBO
VCE(sat)
VBE(sat)
ton
tstg
tf
IC=100mA,
IB=0
VCE= 850V , VEB=
0
VCE= 1000V , VEB= 0
VEB= 9V , IC=0
IC=3A,
IB=0.6A
IC=2.5A,
IB=0.5A
IC=3A,
IB=0.6A
IC=2.5A,
IB=0.5A
VCC= 250V , IC=2.5A
IB1= IB2=0.5A
400
450
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
Unit
V
V
mA
mA
µA
V
V
V
V
µS
µS
µS
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BUT11.PDF ] | |
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