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PDF VBO40-12NO6 Data sheet ( Hoja de datos )
| Número de pieza | VBO40-12NO6 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Standard Rectifier
1~ Rectifier Bridge
Part number
VBO40-12NO6
3 21 4
VBO40-12NO6
13~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
40 A
320 A
Backside: isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Applications:
● Diode for main rectification
● For one phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: SOT-227B (minibloc)
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
1 page  
VBO40-12NO6
Rectifier
80 300 700
50 Hz
0.8 x V RRM
VR = 0 V
600
60 250
IF
40
[A]
20 TVJ =
125°C
150°C
IFSM
200
[A]
150
TVJ = 45°C
TVJ = 150°C
500
I2t
400
[A2s]
300
TVJ = 45°C
200
TVJ = 150°C
TVJ = 25°C
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF [V]
100
10-3
10-2
10-1
t [s]
100
100 1
t [ms]
10
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
28
24
20
Ptot 16
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] 12
8
RthJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
4
0
0 5 10 15 20 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
80
60
IF(AV)M
40
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
1.6
1.2
ZthJC
0.8
[K/W]
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for ZthJC calculation:
i Rth (K/W)
ti (s)
1 0.061 0.0002
2 0.145 0.0036
3 0.398 0.0200
4 0.405 0.1000
5 0.291 0.7000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130517b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VBO40-12NO6.PDF ] | |
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