DataSheet.es    


PDF N0131SH160 Data sheet ( Hoja de datos )

Número de pieza N0131SH160
Descripción Phase Control Thyristor
Fabricantes IXYS 
Logotipo IXYS Logotipo



Hay una vista previa y un enlace de descarga de N0131SH160 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! N0131SH160 Hoja de datos, Descripción, Manual

Date:- 23rd Sept 2014
Data Sheet Issue:- 3
Phase Control Thyristor
Types N0131SH120 to N0131SH160
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1600
1200-1600
1200-1600
1300-1600
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VFGM
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
131
85
269
212
1700
1950
14.5×103
19×103
500
1000
18
5
2
100
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
V
W
W
V
°C
°C
Data Sheet. Types N0131SH120-160 Issue 3
Page 1 of 10
September 2014

1 page




N0131SH160 pdf
Fast Turn-Off Thyristor N0131SH120-N0131SH160
The total dissipation is now given by:
W(TOT) W(original) E f
11.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
 TSINKnewTSINKoriginalE Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
11.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 4 Vr
CS didt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
12.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types N0131SH120-160 Issue 3
Page 5 of 10
September 2014

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet N0131SH160.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
N0131SH160Phase Control ThyristorIXYS
IXYS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar