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PDF M28C64X Data sheet ( Hoja de datos )

Número de pieza M28C64X
Descripción 64 Kbit (8Kb x8) Parallel EEPROM
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! M28C64X Hoja de datos, Descripción, Manual

M28C64C
M28C64X
64 Kbit (8Kb x8) Parallel EEPROM
FAST ACCESS TIME: 150ns
SINGLE 5V ± 10% SUPPLY VOLTAGE
LOW POWER CONSUMPTION
FAST WRITE CYCLE
– 32 Bytes Page Write Operation
– Byte or Page Write Cycle: 5ms
ENHANCED END OF WRITE DETECTION
– Ready/Busy Open Drain Output
(for M28C64C product only)
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
28
1
PDIP28 (P)
28
1
SO28 (MS)
300 mils
PLCC32 (K)
TSOP28 (N)
8 x13.4mm
DESCRIPTION
The M28C64C is an 8 Kbit x8 low power Parallel
EEPROM fabricated with STMicroelectronics pro-
prietary single polysilicon CMOS technology. The
device offers fast access time with low power dis-
sipation and requires a 5V power supply.
The circuit has been designed to offer a flexible
microcontroller interface featuring both hardware
and software handshakingmode with Ready/Busy,
Data Polling and Toggle Bit. The M28C64C sup-
ports 32 byte page write operation.
Figure 1. Logic Diagram
VCC
13
A0-A12
8
DQ0-DQ7
Table 1. Signal Names
A0 - A12 Address Input
DQ0 - DQ7 Data Input / Output
W Write Enable
E Chip Enable
G Output Enable
RB Ready / Busy
VCC Supply Voltage
VSS Ground
W M28C64C
E
RB
G
VSS
AI00746B
February 1999
1/15

1 page




M28C64X pdf
M28C64C, M28C64X
Table 4. AC Measurement Conditions
Input Rise and Fall Times
20ns
Input Pulse Voltages
0.4V to 2.4V
Input and Output Timing Ref. Voltages 0.8V to 2.0V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Figure 5. AC Testing Input Output Waveforms
2.4V
0.4V
2.0V
0.8V
AI00826
Figure 6. AC Testing Equivalent Load Circuit
1.3V
1N914
DEVICE
UNDER
TEST
3.3k
OUT
CL = 30pF
CL includes JIG capacitance
AI01129
Table 5. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
CIN Input Capacitance
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
VIN = 0V
VOUT = 0V
Min Max Unit
6 pF
12 pF
Table 6. Read Mode DC Characteristics (TA = 0 to 70°C or –40 to 85°C, VCC = 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min Max
ILI
ILO
ICC (1)
ICC1 (1)
ICC2 (1)
Input Leakage Current
Output Leakage Current
Supply Current (TTL and CMOS inputs)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
0V VIN VCC
0V VIN VCC
E = VIL, G = VIL , f = 5 MHz
E = VIH
E > VCC –0.3V
10
10
30
2
100
VIL Input Low Voltage
– 0.3
0.8
VIH Input High Voltage
2 VCC +0.5
VOL Output Low Voltage
VOH Output High Voltage
Note: 1. All I/O’s open circuit.
IOL = 2.1 mA
IOH = –400 µA
0.4
2.4
Unit
µA
µA
mA
mA
µA
V
V
V
V
Table 7. Power Up Timing (1) (TA = 0 to 70°C or –40 to 85°C, VCC = 4.5V to 5.5V)
Symbol
Parameter
Min
tPUR Time Delay to Read Operation
tPUW
Time Delay to Write Operation
Note: 1. Sampled only, not 100% tested.
1
10
Max
Unit
µs
ms
5/15

5 Page





M28C64X arduino
Symb
A
A1
A2
B
B1
C
D
D2
E
E1
e1
eA
eB
L
S
α
N
M28C64C, M28C64X
PDIP28 - 28 pin Plastic DIP, 600 mils width
Typ
1.52
33.02
15.24
2.54
14.99
mm
Min
0.38
3.56
0.38
0.20
36.83
13.59
15.24
3.18
1.78
0°
28
Max
5.08
4.06
0.51
0.30
37.34
13.84
17.78
3.43
2.08
10°
Typ
0.060
1.300
0.600
0.100
0.590
inches
Min
0.015
0.140
0.015
0.008
1.450
0.535
0.600
0.125
0.070
0°
28
Max
0.200
0.160
0.020
0.012
1.470
0.545
0.700
0.135
0.082
10°
B1 B
D2
S
N
D
1
A2 A
A1 L
e1
E1 E
Drawing is not to scale.
α
C
eA
eB
PDIP
11/15

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