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PDF R2620ZC24L Data sheet ( Hoja de datos )

Número de pieza R2620ZC24L
Descripción Distributed Gate Thyristor
Fabricantes IXYS 
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No Preview Available ! R2620ZC24L Hoja de datos, Descripción, Manual

Date:- 24 Feb, 2003
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R2620ZC22# to R2620ZC25#
(Old Type Number: R610CH18-25)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2200-2500
2200-2500
2200-2500
2300-2600
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
2620
1722
983
5300
4299
33800
37200
5.71×106
6.92×106
1000
1500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 1 of 12
February, 2003

1 page




R2620ZC24L pdf
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R2620ZC22# to R2620ZC25#
The total dissipation is now given by:
W (TOT) = W (original) + E f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2
=
4
Vr
CS di dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 5 of 12
February, 2003

5 Page





R2620ZC24L arduino
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R2620ZC22# to R2620ZC25#
Figure 17 - Square wave energy per pulse
1.00E+03
R2620ZC22#-25#
Issue 2
di/dt=100A/µs
Tj=125°C
1.00E+02
1.00E+01
1.00E+00
8kA
6kA
4kA
2kA
1.00E-01
1kA
Figure 18 - Square wave energy per pulse
1.00E+03
R2620ZC22#-25#
Issue 2
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
8kA
6kA
1.00E+00
4kA
2kA
1kA
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
100000
Gate may temporarily lose control of conduction angle
1.00E+08
I2t: VRRM10V
I2t: 60% VRRM
10000
ITSM: VRRM10V
ITSM: 60% VRRM
1.00E+07
Tj (initial) = 125°C
R2620ZC22#-25#
Issue 2
1000
1
3 5 10
Duration of surge (ms)
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
Data Sheet. Type R2620ZC22# to R2620ZC25# Issue 2
Page 11 of 12
1.00E+06
February, 2003

11 Page







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