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PDF KTC3879S Data sheet ( Hoja de datos )
| Número de pieza | KTC3879S | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KTC3879S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
35
30
4
50
-50
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3879S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
hFE Rank
RType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Collector-Base Time Constant
Power Gain
ICBO
IEBO
hFE (Note)
VCE(sat)
VBE(sat)
fT
Cob
CC rbb’
Gpe
VCB=35V, IE=0
VEB=4V, IC=0
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=10V, IE=-1mA, f=30MHz
VCC=6V, IE=-1mA, f=10.7MHz
Note : hFE Classification R:40 80, O:70 140, Y:120 240
2001. 2. 24
Revision No : 2
MIN.
-
-
40
-
-
100
1.4
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
400
3.2
50
33
UNIT
A
A
V
V
MHz
pF
pS
dB
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KTC3879S.PDF ] | |
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