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PDF KTC3199 Data sheet ( Hoja de datos )
| Número de pieza | KTC3199 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
KTC3199 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Complementary to KTA1267
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
0.15
400
312
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=6V, IC=2mA
IC=100mA,IB=10mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=1mA
Min Typ Max Unit
50 V
50 V
5V
0.1 μA
0.1 μA
70 700
0.25 V
3.5 pF
80 MHz
CLASSIFICATION OF hFE
RANK
O
RANGE
70-140
Y
120-240
GR
200-400
BL
300-700
B,Jul,2012
1 page | ||
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| PDF Descargar | [ Datasheet KTC3199.PDF ] | |
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