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PDF R1700MC21E Data sheet ( Hoja de datos )

Número de pieza R1700MC21E
Descripción Distributed Gate Thyristor
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! R1700MC21E Hoja de datos, Descripción, Manual

WESTCODE
Date:- 24 August, 2011
Data Sheet Issue:- P1
An IXYS Company
Prospective Data
Distributed Gate Thyristor
Type R1700MC18x to R1700MC21x
(Development Part Number: RX228MC18x-21x)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1800-2100
1800-2100
1800
1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Non-repetitive
Critical rate of rise of on-state current (note 6) Repetitive (50Hz, 60s)
Continuous (50Hz)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1700
1150
610
3500
2875
20
22
2.00×106
2.42×106
1500
1000
500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
Prospective Data Sheet. Types R1700MC18x to R1700MC21x Issue P1
Page 1 of 4
August, 2011

1 page





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