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PDF R3370ZC10D Data sheet ( Hoja de datos )
| Número de pieza | R3370ZC10D | |
| Descripción | Distributed Gate Thyristor | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Date:- 13 May, 2003
Data Sheet Issue:- 1
Distributed Gate Thyristor
Type R3370ZC10# to R3370ZC12#
Old Type No.: R1200CH10-12
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
THS
Tstg
OTHER RATINGS
Maximum mean on-state current, Tsink=55°C, (note 2)
Maximum mean on-state current. Tsink=85°C, (note 2)
Maximum mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
3370
2145
1179
6850
5360
43.9
48.3
9.64×106
11.66×106
1000
1500
5
5
50
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 1 of 12
May, 2003
1 page  
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
( )TSINK (new) = TSINK (original ) − E ⋅ k + f ⋅ Rth(J −Hs )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W = W(TOT)
(original)
+E⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) − E ⋅ Rth ⋅ f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2
=
4⋅
Vr
CS ⋅ di dt
Vr = Commutating source voltage
Where: CS = Snubber capacitance
R = Snubber resistance
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 5 of 12
May, 2003
5 Page 
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Figure 17 - Square wave energy per pulse
1.00E+03
R3370ZC10#-12#
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+02
1.00E+01
1.00E+00
8kA
6kA
4kA
2kA
1.00E-01
1kA
Figure 18 - Square wave energy per pulse
1.00E+03
R3370ZC10#-12#
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
8kA
6kA
4kA
1.00E+00
1.00E-01
2kA
1kA
500A
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
1000000
Gate may temporarily lose control of conduction angle
R3370ZC10#-12#
Issue 1
I2t: VRRM≤10V
Tj (initial) = 125°C
1.00E+08
I2t: 60% VRRM
100000
1.00E+07
10000
1
3 5 10
Duration of surge (ms)
ITSM: 60% VRRM
ITSM: VRRM≤10V
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
1.00E+06
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 11 of 12
May, 2003
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet R3370ZC10D.PDF ] | |
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