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PDF R0577YS12D Datasheet ( Hoja de datos )

Número de pieza R0577YS12D
Descripción Distributed Gate Thyristor
Fabricantes Westcode Semiconductors 
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R0577YS12D datasheet

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R0577YS12D pdf
WESTCODE Positive development in power electronics
R0577YS10x to R0577YS12x
The total dissipation is now given by:
W = W(TOT)
(original)
+Ef
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TSINK (new) = TSINK (original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 5 of 12
June, 2001

5 Page

R0577YS12D arduino
WESTCODE Positive development in power electronics
R0577YS10x to R0577YS12x
Figure 17 - Square wave energy per pulse
1.00E+03
R0577YS10x-12x
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+02
1.00E+01
3kA
1.00E+00
2kA
1.5kA
1kA
1.00E-01
500A
Figure 18 - Square wave energy per pulse
1.00E+03
R0577YS10x-12x
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
3kA
2kA
1.00E+00
1.5kA
1kA
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
1.00E-01
1.00E-05
1.00E-04
1.00E-03
Pulse width (s)
1.00E-02
Figure 19 - Maximum surge and I2t Ratings
100000
Gate may temporarily lose control of conduction angle
R0577YS10x-12x
Issue 1
Tj (initial) = 125°C
1.00E+07
10000
I2t: VRRM10V
I2t: 60% VRRM 1.00E+06
ITSM: VRRM10V
1000
1
3 5 10
Duration of surge (ms)
ITSM: 60% VRRM
1.00E+05
1
5 10
50 100
Duration of surge (cycles @ 50Hz)
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 11 of 12
June, 2001

11 Page





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