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PDF G1000LL250 Datasheet ( Hoja de datos )

Número de pieza G1000LL250
Descripción Anode-Shorted Gate Turn-Off Thyristor
Fabricantes IXYS 
Logotipo IXYS Logotipo

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G1000LL250 Hoja de datos, Descripción, Manual
Date:- 18 Feb, 2004
Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor
Type G1000L#250
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VDC-link
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Maximum continuous DC-link voltage.
MAXIMUM
LIMITS
2500
2500
18
1400
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Maximum turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
500
970
7.5
8.9
125x103
1000
160
8
100
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type G1000L#250 Issue 1
Page 1 of 13
February, 2004

1 page

G1000LL250 pdf
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IG
IGM
100µs
Gate current
100µs
15V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Data Sheet. Type G1000L#250 Issue 1
Diagram 6.
Page 5 of 13
February, 2004

5 Page

G1000LL250 arduino
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Figure 5 – Typical turn-on
(including snubber discharge)
0.35
0.3
G1000L#250
Issue 1
VD=50%VDRM,
IGM=20A, diFG/dt=10A/µs
Cs=2µF, Rs=5Ω,
Tj=125°C
energy per pulse
di/dt=300A/µs
Figure 6 – Maximum gate turn-off charge
3.5
G1000L#250
Issue 1
VD=50%VDRM, VDM=VDRM
diGQ/dt25A/µs,
3 Cs=2µF, Tj=125°C
0.25
0.2
0.15
di/dt=200A/µs
di/dt=100A/µs
2.5
2
1.5
1
0.1
0.5
0.05
0
500
1000
1500
Turn on current, ITM (A)
2000
0
0 200 400 600 800 1000
Turn off current, ITGQ (A)
Figure 7 – Typical turn-off energy per pulse
2
G1000L#250
Issue 1
1.8 VD=50%VDRM, VDM=2000V
diGQ/dt=25A/µs,
Tj=125°C
Cs=1µF
Cs=2µF
1.6
Figure 8 – Maximum permissible turn-off current
3.5
G1000L#250
Issue 1
VD=50%VDRM, VDM=VDRM
diGQ/dt=25A/µs,
3 LS<300nH, Tj=125°C
1.4
Cs=0.5µF
1.2
1
0.8
2.5
2
1.5
0.6
0.4
0.2
0
0
200
400
600
800
1000
1200
Turn off current, ITGQ (A)
1
0.5
0
0
500 1000
Turn off current, ITGQ (A)
1500
Data Sheet. Type G1000L#250 Issue 1
Page 11 of 13
February, 2004

11 Page


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