DataSheet.es G1000LL250 Hoja de datos PDF



PDF G1000LL250 Datasheet ( Hoja de datos )

Número de pieza G1000LL250
Descripción Anode-Shorted Gate Turn-Off Thyristor
Fabricantes IXYS 
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G1000LL250 datasheet

1 Page

G1000LL250 pdf
WESTCODE An IXYS Company
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IG
IGM
100µs
Gate current
100µs
15V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Data Sheet. Type G1000L#250 Issue 1
Diagram 6.
Page 5 of 13
February, 2004

5 Page

G1000LL250 arduino
WESTCODE An IXYS Company
Curves
Figure 1 –Forward gate characteristics
100
G1000L#250
Issue 1
For Tj=-40°C to 125°C
Minimum
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
Figure 2 - On-state characteristics of Limit device
10000
G1000L#250
Issue 1
Tj=25°C
Tj=125°C
Maximum
10 1000
1 100
0.1
0
0.5 1
Instantaneous forward gate voltage, VFG (V)
1.5
Figure 3 – Typical forward blocking voltage Vs.
external gate-cathode resistance
1.1
G1000L#250
Issue 1
10
0
246
Instantaneous on state voltage, VT (V)
Figure 4 – Gate trigger current
10
G1000L#250
Issue 1
Tj=125°C
1
8
`
0.9
0.8 1
0.7
0.6
0.5
1
10 100
External gate-cathode resistance, RGK
1000
0.1
-50
-25
0 25 50 75 100 125 150
Junction temperature, Tj (°C)
Data Sheet. Type G1000L#250 Issue 1
Page 10 of 13
February, 2004

10 Page





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