WESTCODE An IXYS Company
Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IGM IG
100µs
Gate current
100µs
16V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10Ω.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Diagram 6.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 5 of 15
January, 2008
WESTCODE An IXYS Company
Figure 3 – Forward gate characteristics
1000
G1000QC400-450
Issue 1
FOR Tj=-40oC TO +125oC
Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
Figure 4 – Transient thermal impedance
1
G1000QC400-450
Issue 1
100
MINIMUM
10
MAXIMUM
0.1
0.01
CATHODE
ANODE
DOUBLE-SIDE
1
0 0.5 1 1.5 2
INSTANTANEOUS FORWARD GATE VOLTAGE, VFG (V)
Figure 5 – Typical forward blocking voltage Vs.
external gate-cathode resistance
0.001
0.001
Figure 6 –
temperature
0.01
Gate
0.1 1
TIME, (S)
10
trigger current Vs
100
junction
1.2
G1000QC400-450
AD Issue 1
10
G1000QC400-450
AD Issue 1
1
Tj=50oC
0.8
Tj=80oC
0.6
Tj=105oC
1
Tj=125oC
0.4
MAXIMUM
0.2
0
1 10 100 1000
EXTERNAL GATE-CATHODE RESISTANCE, RGK (Ω)
TYPICAL
0.1
-50 -25
0
25 50 75 100 125 150
JUNCTION TEMPERATURE, Tj(oC)
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 11 of 15
January, 2008
