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PDF KSA1182 Data sheet ( Hoja de datos )
| Número de pieza | KSA1182 | |
| Descripción | PNP Transistor | |
| Fabricantes | JinYu | |
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KSA1182
TRANSISTOR (PNP)
SOT-23
FEATURES
Complement to KSC2859
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.5
150
150
-55-150
Units
V
V
V
A
mW
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-100μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO
VCB=-35V, IE=0
IEBO VEB=-5V, IC=0
hFE(1) VCE=-1V, IC=-100mA
hFE(2) VCE=-6V, IC=-400mA
VCE(sat) IC=-100mA, IB=-10mA
VBE VCE=-1V, IC=-100mA
fT VCE=-6V, IC=-20mA
Cob VCB=-6V, IE=0, f=1MHz
MIN TYP MAX UNIT
-35 V
-30 V
-5 V
-0.1 μA
-0.1 μA
70 240
25
-0.25
V
-1.0 V
200 MHz
13 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
70-140
F1O
Y
120-240
F1Y
JinYu
semiconductor
www.htsemi.com
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