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PDF FMMT591 Data sheet ( Hoja de datos )
| Número de pieza | FMMT591 | |
| Descripción | PNP Transistor | |
| Fabricantes | JinYu | |
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FMMT591
TRANSISTOR (PNP)
FEATURES
Low equivalent on-resistance
SOT-23
Marking :591
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
1. BASE
2. EMITTER
3. COLLECTOR
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO1 IC=-10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO VCB=-60V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
hFE(1)
VCE=-5V, IC=-1mA
DC current gain
hFE(2) 1
hFE(3) 1
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
hFE(4) 1
VCE=-5V, IC=-2A
Collector-emitter saturation voltage
VCE(sat)1 1
VCE(sat)2 1
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
Base-emitter saturation voltage
VBE(sat) 1 IC=-1A, IB=-100mA
Base-emitter voltage
VBE1
VCE=-5V, IC=-1A
Transition frequency
fT VCE=-10V,IC=-50mA,,f=100MHz
Collector output capacitance
Cob VCB=-10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
MIN TYP MAX UNIT
-80 V
-60 V
-5 V
-0.1 μA
-0.1 μA
100
100 300
80
15
-0.3 V
-0.6 V
-1.2 V
-1 V
150 MHz
10 pF
JinYu
semiconductor
www.htsemi.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT591.PDF ] | |
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