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Número de pieza | K6R4008C1C-C | |
Descripción | 512K x 8bit High Speed Static CMOS SRAM | |
Fabricantes | Samsung | |
Logotipo | ||
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K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA
Rev. 2.0
2.1 Relax D.C parameters.
Item
12ns
ICC 15ns
20ns
Previous
170mA
165mA
160mA
Current
195mA
190mA
185mA
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
195mA
190mA
185mA
Previous
Isb
70mA
Isb1
20mA
ICC
170mA
160mA
150mA
140mA
Current
Isb
60mA
Isb1
10mA
3.3 Added Extended temperature range
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Aug. 19. 1999 Preliminary
Mar. 27. 2000 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 3.0
March 2000
1 page PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
* The above test conditions are also applied at extended and industrial temperature range.
Value
0V to 3V
3ns
1.5V
See below
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address
Chip Selection to Power Up Time
Chip Selection to Power Down-
Sym-
bol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6R4008C1C-10
Min Max
10 -
- 10
- 10
-5
3-
0-
05
05
3-
0-
- 10
K6R4008C1C-12
Min Max
12 -
- 12
- 12
-6
3-
0-
06
06
3-
0-
- 12
K6R4008C1C-15 K6R4008C1C-20
Min Max Min Max
15 - 20 -
- 15 - 20
- 15 - 20
-7-9
3-3-
0-0-
0709
0709
3-3-
0-0-
- 15 - 20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* The above parameters are also guaranteed at extended and industrial temperature range.
-5-
Rev 3.0
March 2000
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K6R4008C1C-C.PDF ] |
Número de pieza | Descripción | Fabricantes |
K6R4008C1C-C | 512K x 8bit High Speed Static CMOS SRAM | Samsung |
K6R4008C1C-E | 512K x 8bit High Speed Static CMOS SRAM | Samsung |
K6R4008C1C-I | 512K x 8bit High Speed Static CMOS SRAM | Samsung |
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