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PDF K6R4008C1D Data sheet ( Hoja de datos )
| Número de pieza | K6R4008C1D | |
| Descripción | 512K x8 Bit High Speed Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6R4008C1D
Document Title
512Kx8 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY
CMOS SRAM
RevNo.
Rev. 0.0
Rev. 0.1
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
Item
10ns
ICC(Commercial)
12ns
15ns
10ns
ICC(Industrial)
12ns
15ns
ISB
ISB1(Normal)
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Rev. 0.2
Rev. 0.3
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
Rev. 1.0
Rev. 2.0
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
1. Add the Lead Free Package type.
Draft Data
September. 7. 2001
November, 3. 2001
Remark
Preliminary
Preliminary
November, 23. 2001 Preliminary
December, 18. 2001 Preliminary
July, 09, 2002
Final
July. 26, 2004
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 2.0
July 2004
1 page  
K6R4008C1D
PRELIMINARY
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.2
-0.5**
Typ
5.0
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA
Max
5.5
0
VCC+0.5***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Unit
Input Leakage Current
Output Leakage Current
ILI VIN=VSS to VCC
ILO CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2 2 µA
-2 2 µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
10ns
10ns
-
-
65
mA
75
Standby Current
Output Low Voltage Level
ISB Min. Cycle, CS=VIH
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
VOL IOL=8mA
- 20
mA
-5
- 0.4 V
Output High Voltage Level VOH IOH=-4mA
2.4 -
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
-5-
Rev. 2.0
July 2004
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K6R4008C1D.PDF ] | |
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