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PDF BCW30 Data sheet ( Hoja de datos )
| Número de pieza | BCW30 | |
| Descripción | PNP Silicon Epitaxial Planar Transistor | |
| Fabricantes | CHINA BASE | |
| Logotipo |  |
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BCW30 PNP Silicon Epitaxial Planar Transistor
general purpose switching and amplification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
Base Emitter Voltage
at -VCE = 5 V, -IC = 2 mA
Transition Frequency
at -VCE = 5 V, IE = 10 mA, f = 100 MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Page 1 of 2
1.Base 2.Emitter 3.Collecto
SOT-23 Plastic Package
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICM
Ptot
Tj
TS
Value
32
32
5
100
200
200
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Symbol
hFE
Min.
215
-ICBO
-
-IEBO
-
-V(BR)CBO
32
-V(BR)CEO
32
-V(BR)EBO
5
-VCE(sat)
-
-VBE
0.6
fT 100
CCBO
-
Typ.
-
-
-
-
-
-
-
-
-
4.5
Max.
500
100
100
-
-
-
0.3
0.75
-
-
Unit
-
nA
nA
V
V
V
V
V
MHz
pF
6/3/2011
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW30.PDF ] | |
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