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PDF BC856BDW1T1G Data sheet ( Hoja de datos )
| Número de pieza | BC856BDW1T1G | |
| Descripción | Dual General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
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BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
VCEO
−65
−45
−30
V
Collector −Base Voltage
BC856, SBC856
BC857, SBC857
BC858
VCBO
−80
−50
−30
V
Emitter −Base Voltage
Collector Current −Continuous
Collector Current − Peak
VEBO
IC
IC
−5.0
−100
−200
V
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
380 mW
250 mW
3.0 mW/°C
°C/W
328
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
3x MG
G
1
3x = Specific Device Code
x = B, F, G, or L
(See Ordering Information)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
August, 2016 − Rev. 10
1
Publication Order Number:
BC856BDW1T1/D
1 page  
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0 1.0
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
10 100 1.0 k
t, TIME (ms)
Figure 13. Thermal Response
10 k
100 k
1.0 M
-200
1 s 3 ms
-100
-50 TA = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
TJ(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
www.onsemi.com
5
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