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Número de pieza | 2N4003NLT1 | |
Descripción | Small Signal MOSFET | |
Fabricantes | WILLAS | |
Logotipo | ||
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No Preview Available ! WILLAS
S1.m0AaSlUl RSFiAgCnEaMlOMUNOT SSCFHEOTTTK3Y0VB,A0R.5R6IAER, SRiEnCgTlIeF,ISEROST--2203V- 200V
SOD-123+ PACKAGE
FM120-M+
2N4003NLTTH1RU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
•
•
HLGoigwhapctouewrreeErnltoScsasDp, ahibPgihlirteyo,ffliotcewiecfnoctrywi.oarnd v,oNlta−geCdrhopa. nnel
0.146(3.7)
0.130(3.3)
• High surge capability.
• GFueaartdurrinegsfor overvoltage protection.
•
•
•
U•ltrLa ohwighG-sapteeeVdosltwaigtcehTinhgr.eshold(Vgs(th))to Facilitate
LSM••eiIlaLicELd-oS-SonfTwrDeeDepGP-i1ptraa9oatx5etreit0asCc0ltmhep/2adlear2egGn8teaaertfnecovhririFpoa,nsmmteeStnwatlaistlcislhitciaonnngdjaurndcstioofn.
Drive
Circuit
Design
• R•oHMS ipnriomduucmt foBr rpeaackkdinogwcnodVeoslutaffgixe"GR"ating of 30 V
H•aloPgbe-nFfrreeee praocdkuacgt eforispaacvkainilgabcolede suffix "H"
MecRhoHaSnpirocdaucltdfoar ptaacking code suffix ”G”
• EpoHxaylo: UgeLn94fr-eVe0prraotdeudcftlafomreparectkainrdgacnotde suffix “H”
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
S O T -02. 034 0 ( 1 . 0 )
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Applications
T•ermLienvaells S:Phliaftteerdsterminals,
solderable
per
,
MIL-STD-750
•
•
Method 2026
Level Switches
P•olaLroitwy :SIniddeicLatoeaddbSywcaittchhoedse
band
• M•ouPnotrintagbPleosAitpiopnlic: Aatnioyns
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Drain
Dimensions in inches and (millimet3ers)
Gate 1
MAXIMMAUXMIMRAUTMINRGAST(ITNJ G= 2S5°ACNuDnleEssLoEthCeTrwRisIeCnAoLtedC) HARACTERISTICS
Ratings at 25℃ ambient tempPearraatmuretuenr less otherwise specifSieydm. bol Value Unit
Single phasDerhaainlf−wtoa−vSeo,u6r0cHe zV,orletasgisetive of inductive load.
VDSS
30
V
2
For capacitiGveatleo−atdo,−dSeoruartececuVrorletangt eby 20%
VGS ±20 V
Source
ContinuousRADTraINinGS
Marking CodeCurrent (Note 1)
Steady
State
Maximum Recurrent Peak Reverse Voltage
TA
S=Y2M5B°COL
FM112I2D0-MH
FM1300.-5MH FM14A0-MH
13 14
FM150-MH
15
FM160-MH
16
FM180-MH
18
FM1100-MH
10
FM1150-MH
115
FM1200-MH
120
UNIT
TA =V8R5R°MC
20
300.37 40
50
60
80 100 150 200 Volts
Maximum RMPSowVoelrtaDgiessipation
Maximum DC(NBoloteck1in)g Voltage
Steady StaVteRMS 1P4D 201.69 2W8 35
VDC 20 30 40 50
42
60
M56ARKING70DIAGR1A0M5
80 1030 150
140 Volts
200 Volts
Maximum AvCCerouanrgrteeinnFutoo(rNuwsoatrDedr1aR)ienctified Currte<nt10 s
TA = 2I5O°C
TA = 85°C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposedP(Noonowrtaeetre1dD) liosasdip(aJtEioDnEC method)
t<5s
IFSM
Typical Thermal Resistance (Note 2)
RΘJA
Typical JunctPiounlsCeadpDacriatainncCeu(rNreontet 1)
tp = 10 ms CJ
Operating TeOmpperatuinrge RJuanncgteion and Storage TemperatuTreJ
ID 0.56 A
0.40
PD 0.83 W
IDM 1 .7 A
TJ, -55−t5o5+t1o25 °C
1.0
30
40
120
Drain
TR8
1 2
G-a5t5eto +1S50ource
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
TSTG
Tstg
150
- 65 to +T1R758 = Specific Device Code
℃
Source Current (Body Diode)
IS 1.0 A
M = Month Code
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForL(w1e/aa8rd”dfTVroeommltapcgeaersaaettuf1roe.r0fA1o0rDSsC)oldering Purposes VF
TL 2600.50 °C
Maximum ASvetrreasgseeRs eevxecrseeeCdiunrgrenMt aaxt im@umT A=R2a5t℃ings mayIR damage the device. Maximum
0.70
0.85
0.9
0O.5RDERING INFORMATION
0.92
Volts
mAmps
Rated DC BRloactkininggsVaoreltasgteress ratings o@nlyT.AF=u1n2c5t℃ional operation above the Recommended
Devic1e0
Package
Shipping
Operating Conditions is not implied. Extended exposure to stresses above the
NOTES: Recommended Operating Conditions may affect device reliability.
2N4003NLT1 SOT−23
3000/Tape & Reel
1- Measured aTt H1 MEHRZMaAndLapRpElieSdIrSevTeArsNe CvoEltaRgeAoTf I4N.0GVSDC.
2- Thermal Resistance From Junction to Ambient
Parameter
Junction−to−Ambient − Steady State (Note 1)
Symbol
RqJA
Max
180
Unit
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
2012-20. 6S(Cuurfaacreea−m=o1u.1n2te7dinonsqFR[14obzo] ainrcdluudsiinngg
traces).
the minimum
recommended
pad
size.
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
1 page WILLAS
S1.m0AaSlUlRSFAigCnE aMlOUMNOT SSCFHEOTTTK3Y0VB,A0R.5R6IEAR, SRiEnCgTlIeF,IESROST--2203V- 200V
SOD-123+ PACKAGE
FM120-M+
2N4003NLTTH1RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junctio.n1.22(3.10)
•
Lead-free parts meet
MIL-STD-19500 /228
environmental
standards
o.f106(2.70)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 g.0ra8m0(2.04)
MAXIMUM RATING.S07A0N(D1.E7L8E) CTRICAL CHARACTERISTICS
.008(0.20)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12 13 14 15 16
Maximum Recurrent Peak Reve.0rs0e 4Vo(0lta.g1e0)MAX. VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
IO
1.0
.020(0.50)Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
.012(0.30)
RΘJA
CJ
40
120
Operating Temperature Range
DiTmJ ensions in-5i5nctoh+e1s25and (millimeter s)
Storage Temperature Range
TSTG
- 65 to +175
-55 to +150
Amps
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
VF
IR
0.037
0.95
0.50
0.70
0.037
0.95
0.5
10
0.85
0.9 0.92 Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
2012-06
2012-10
0.031
inches
0.8 mm WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N4003NLT1.PDF ] |
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2N4003NLT1 | Small Signal MOSFET | WILLAS |
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