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PDF 2N5883 Data sheet ( Hoja de datos )
| Número de pieza | 2N5883 | |
| Descripción | SILICON EPITAXIAL PNP TRANSISTOR | |
| Fabricantes | TT | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5883 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SILICON EPITAXIAL
PNP TRANSISTOR
2N5883
• High Voltage, Low Saturation Voltages.
• Hermetic TO3 Metal Package.
• Designed For Power Switching
and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-25A
ICM Peak Collector Current
-50A
IB Base Current
-7.5A
PD Total Power Dissipation at TC = 25°C
200W
Derate Above 25°C
1.14W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
0.875
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 5981
Website: http://www.semelab-tt.com
Issue 3
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5883.PDF ] | |
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