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PDF 2SC5344 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5344 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC5344 TRANSISTOR (NPN)
FEATURES
z Audio power amplifier application
z High hFE : hFE=100~320
z Complementary to 2SA1981
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC = 0.1mA, IB=0
35
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO
IE= 0.01mA, IC=0
5
Collector cut-off current
ICBO VCB=35V , IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE VCE=1V, IC= 100mA
100
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB=50mA
Transition frequency
fT VCE=5V, IC=10mA
Collector Output Capacitance
Cob VCB=10V,IE= 0,f=1MHz
Typ
120
13
Max Unit
V
V
V
0.1 μA
0.1 μA
320
0.5 V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
100-200
FAO
Y
160-320
FAY
A,May,2011
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