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PDF 2SA1981 Data sheet ( Hoja de datos )

Número de pieza 2SA1981
Descripción PNP Plastic Encapsulated Transistor
Fabricantes SeCoS 
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No Preview Available ! 2SA1981 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
2SA1981
-0.8 A, -35 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
Complementary Pair with 2SC5344
CLASSIFICATION OF hFE
Product-Rank 2SA1981-O 2SA1981-Y
Range
100~200 160~320
GH
J
AD
B
K
E CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-35
-30
-5
-0.8
625
200
150, -55~150
Collector


Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V(BR)CBO
-35
-
-
V
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
Collector Cut-Off Current
ICBO - - -0.1 μA
Emitter Cut-Off Current
IEBO - - -0.1 μA
DC Current Gain
hFE 100 - 320
Collector to Emitter Saturation Voltage
VCE(sat)
-
- -0.5 V
Transition Frequency
fT - 120 - MHz
Collector Output Capacitance
Cob - 19 - pF
Test condition
IC= -0.5mA, IE=0
IC= -1mA, IB=0
IE= -0.05mA, IC=0
VCB= -35V, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -0.1A
IC= -0.5A, IB= -20mA
VCE= -5V, IC= -10mA
VCB= -10V, IE= 0, f=1MHz
http://www.SeCoSGmbH.com/
26-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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