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PDF 2SC1959 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1959 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SC1959
0.5A, 35V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent hFE Linearity
High Transition Frequency
CLASSIFICATION OF hFE
Product-Rank 2SC1959-O
hFE(1)
Range
hFE(2)
70~140
25 (Min)
2SC1959-Y
120~240
40 (Min)
2SC1959-GR
200~400
-
MARKING
C1959
031
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Continuous Collector Current
IC
Collector Power Dissipation
PC
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
Collector Cut – Off Current
ICBO
-
-
Emitter Cut – Off Current
IEBO
-
-
DC Current Gain
70
hFE 25
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
Base to Emitter Voltage
VBE -
-
Collector Output Capacitance
Cob -
7
Transition Frequency
fT - 300
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Emitter
Collector
Base
Rating
35
30
5
500
500
250
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
Max.
-
-
-
0.1
0.1
400
-
0.25
1
-
-
Unit Test Condition
V IC=0.1mA, IE=0
V IC=1mA, IB=0
V IE=0.1mA, IC=0
μA VCB=35V, IE=0
μA VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
V IC=100mA, IC=10mA
V VCE=1V, IC=100mA
pF VCB=6V, IE=0, f=1MHz
MHz VCE=6V, IC=20mA
http://www.SeCoSGmbH.com/
01-Aug-2016 Rev. F
Any changes of specification will not be informed individually.
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| PDF Descargar | [ Datasheet 2SC1959.PDF ] | |
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