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Número de pieza | 2SC1815 | |
Descripción | NPN Silicon Epitaxial Planar Transistor | |
Fabricantes | SEMTECH | |
Logotipo | ||
1. - SOT-23, Vceo=50V, NPN Transistor Hay una vista previa y un enlace de descarga de 2SC1815 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! ST 2SC1815
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current
gain. As complementary type the PNP
transistor ST 2SA1015 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T a = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
TO-92 Plastic Package
Weight approx. 0.19g
Value
60
50
5
150
50
400
125
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at T amb = 25 OC
Parameter
DC Current Gain
at VCE=6V, IC=2mA
Current Gain Group
at VCE=6V, IC=150mA
Collector Saturation Voltage
at IC=100mA, IB=10mA
Base Saturation Voltage
at IC=100mA, IB=10mA
Collector Cutoff Current
at VCB=60V
at VEB=5V
Gain Bandwidth Product
at VCE=10V, IC=1mA
Output Capacitance
at VCB=10V, f=1MHz
Noise Figure
at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ
O
Y
G
L
Symbol
hFE
hFE
hFE
hFE
hFE
VCE(sat)
VBE(sat)
ICBO
IEBO
fT
COB
NF
Min.
70
120
200
350
25
-
-
-
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
2
1
Max.
140
240
400
700
-
0.25
1
0.1
0.1
-
3
1
Unit
-
-
-
-
-
V
V
µA
µA
MHz
pF
dB
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
®
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC1815.PDF ] |
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