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PDF 2SB772 Data sheet ( Hoja de datos )
| Número de pieza | 2SB772 | |
| Descripción | PNP Silicon Power Transistor | |
| Fabricantes | BLUECOLOUR | |
| Logotipo |  |
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 1. PNP Silicon Transistor - UTC  Hay una vista previa y un enlace de descarga de 2SB772 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2SB772
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
SOT-23
1．BASE
2．EMITTER
3．COLLECTOR
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current (t = 10 ms)
Base Current
Total Power Dissipation @ Ta = 25 OC
Total Power Dissipation @ Tc = 25 OC
Operating and Storage Junction Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
-IB
PD
PD
Tj , Tstg
Value
40
30
5
3
7
0.6
1
10
- 65 to + 150
Unit
V
V
V
A
A
A
W
W
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A Current Gain Group
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 1 mA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 1 mA
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 100 mA,
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
hFE
R hFE
Q hFE
P hFE
E hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cob
Min.
30
60
100
160
200
-
-
40
30
5
-
-
-
-
Typ. Max. Unit
- --
- 120 -
- 200 -
- 320 -
- 400 -
- 1 µA
- 1 µA
- -V
- -V
- -V
- 0.5 V
- 2V
80 - MHz
55 - pF
Page 1 of 2
7/26/2012
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB772.PDF ] | |
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