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PDF 2SB709A Data sheet ( Hoja de datos )
| Número de pieza | 2SB709A | |
| Descripción | PNP Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB709A
Features
High forward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-45
-45
-7
-100
-200
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base current
Collector-emitter current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0 A
ICEO VCE = -10 V, IB = 0 A
hFE VCE = -10 V, IC = -2 mA
VCE(sat) IC = -100 mA, IB = -10 mA
fT VCB = -10 V, IE = 1 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-45 V
-45 V
-7 V
-0.1 ìA
-100 ìA
160 460
-0.3 -0.5 V
80 MHz
2.7 pF
hFE Classification
Marking
hFE
BQ
160 260
BR
210 340
BS
290 460
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