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PDF 2SB624 Data sheet ( Hoja de datos )
| Número de pieza | 2SB624 | |
| Descripción | PNP Transistor | |
| Fabricantes | TRANSYS | |
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Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SB624 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.2 W (Tamb=25℃)
Collector current
ICM: -0.7
Collector-base voltage
A
V(BR)CBO:
-30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE(on) *
fT
Test conditions
Ic=-100µA, IE=0
Ic= -1 mA, IB=0
IE= -100 µA, IC=0
VCB=-30 V , IE=0
VEB= -5V , IC=0
VCE= -1V, IC= -100mA
VCE=-1V, IC= -700mA
IC=-700 mA, IB= -70mA
VCE=-6V, IC=-10mA
VCE= -6V, IC= -10mA
MIN
-30
-25
-5
110
50
-0.6
140
TYP
MAX
-0.1
-0.1
400
UNIT
V
V
V
µA
µA
-0.6 V
-0.7 V
MHz
* Pulse test : Pulse width ≤350µs,Duty Cycle≤2%.
CLASSIFICATION OF hFE(1)
Marking
BV1
Range
110-180
BV2
135-220
BV3
170-270
BV4
200-320
BV5
250-400
1 page | ||
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