|
|
PDF 2SB624 Data sheet ( Hoja de datos )
| Número de pieza | 2SB624 | |
| Descripción | PNP Silicon Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB624 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
2SB624
-0.7A , -30V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)
Complimentary to 2SD596
MARKING
Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3
Range
110~180
135~220
170~270
Product-Rank 2SB624-BV4 2SB624-BV5
Range
200~320
250~400
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80
2.25
1.20
3.00
2.55
1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-30
-25
-5
-700
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Symbol
V(BR)CBO
Min.
-30
Typ.
-
Max.
-
Collector to Emitter Breakdown Voltage V(BR)CEO -25
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
Collector Cut-off Current
ICBO
-
- -0.1
Emitter Cut-off Current
IEBO
-
- -0.1
DC Current Gain
hFE
*
(1)
110
-
400
hFE
*
(2)
50
-
-
Collector to Emitter
Saturation Voltage
VCE(sat) *
-
- -0.6
Base to Emitter Saturation Voltage
VBE *
-0.6
-
-0.7
Transition Frequency
fT - 160 -
Collector Output Capacitance
Cob - 17 -
*Pulse test：Pulse width ≦ 350 s, Duty Cycle ≦ 2%.
http://www.SeCoSGmbH.com/
15-Feb-2011 Rev. A
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
IC= -100A, IE=0
IC= -1mA, IB=0
IE= -100A, IC=0
VCB= -30V, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -700mA
IC= -700mA, IB= -70mA
VCE= -6V, IC= -10mA
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB624.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB621 | Silicon PNP epitaxial planer type(For low-frequency output amplification) |  Panasonic Semiconductor |
| 2SB621A | Silicon PNP epitaxial planer type(For low-frequency output amplification) | Panasonic Semiconductor |
| 2SB624 | AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |  NEC |
| 2SB624 | Silicon PNP transistor |  BLUE ROCKET ELECTRONICS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |