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PDF 2SB1198K Data sheet ( Hoja de datos )
| Número de pieza | 2SB1198K | |
| Descripción | PNP Transistor | |
| Fabricantes | DXC | |
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2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA)
High breakdown voltage BVCEO=-80V
Complements the 2SD1782K
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-23-3L
2.92
0.35
1.17
2.80 1.60
0.15
1.90
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-50μA, IE=0
-80
Collector-emitter breakdown voltage
V(BR)CEO IC=-2mA, IB=0
-80
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA, IC=0
-5
Collector cut-off current
ICBO VCB=-50V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
DC current gain
hFE(1) VCE=-3V, IC=-100mA
120
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Transition frequency
fT VCE=-10V, IC=-50mA, f=100MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
TYP MAX UNIT
V
V
V
-0.5 μA
-0.5 μA
390
-0.5 V
180 MHz
11 pF
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
Q
120-270
AKQ
R
180-390
AKR
Shenzhen Dingxincheng Electronic Technology Co., Ltd.
www.dxc-et.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1198K.PDF ] | |
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