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PDF 2SA812SLT1 Data sheet ( Hoja de datos )
| Número de pieza | 2SA812SLT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | WILLAS | |
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WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FE•ALToUwRpErofile surface mounted application in order to
optimize board space.
ƽ•HLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency.
ƽ•EHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage drop.
SOD-123H
0.146(3.7)
0.130(3.3)
ƽ•NHPiNghcosmurpgleemceanpta: 2bSiliCty1.623
ƽ•WGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. compliance with RoHS requirements.
•PUbl-tFrareheigpha-cskpaegede siswaitvcahiilnagb.le
•RSoiHlicSopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”liGco” n junction.
•HLaeloagde-fnrefreepeaprrtsodmuecet tfoernpvaircokninmgecnotadlesstaunffdixa“rHds” of
•MRMooiIHsLt-SuSrpTerDoSd-e1unc9st5ift0oiv0r ipt/y2ac2Lk8einvgelc1ode suffix "G"
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
DEMVHeIaClcoEghenMafrnAeeRicpKraoIdNludcGt afoAtr NapaDckiOngRcoDdEe RsuIfNfixG"HI"NFORMATION
D• eEvpicoexy
:
UL
94-V0
rated
Marking
flame retardant
Shipping
2•SCAa8s1e2Q: MLTo1lded plastic, SODM-1823H
3000/Tape&Reel
2• STAe8r m12i nRaLlTs1: P l a t e d
terminalsM, 6sold
er
able
per
,
MIL-ST30D0-07/5T0ape&Reel
0.031(0.8) Typ.
1
BASE
3
COLLE0C.0T4O0R(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
2•SPAo8la12riStyLT: I1ndicated by cathMod7e band
3000/Tape&Reel
2
Dimensions in inches and (milElimMeITtTeErsR)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatinMgsAaXt 2IM5℃UMambRieAnt TteImNpGerSature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive loadR,adteinragte current by 20% Symbol
2SA812
Unit
Collector-Emitter Voltage
RATINGS
VCEOSYMBOL
-50 V
FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
U
MarkiCngoClleocdteor-Base Voltage
VCBO
12-60 13 V14 15 16
18 10
115 120
MaximEummitRteerc-uBraresnet PVeoalktaRgeeverse Voltage
Maximum RMS Voltage
Collector current-continuoun
Maximum DC Blocking Voltage
VEBO VRRM
VRMS
IC
VDC
20-6 30
V40
14 21 28
-150
mAdc
20 30 40
50
35
50
60
42
60
80 100 150 200 Vo
56 70 105 140 Vo
80 100 150 200 Vo
Maximum Average Forward Rectified Current
IO
1.0 A
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
30 A
superimposed on rated load (JEDEC method)
TypicaTl THheErmRaMl RAesListaCncHeA(NRotAe 2T)EERISTICS
TOyppeircaatlinJgunTcetimonpeCraatpuarecitRaanncCegeh(Naortaec1t)eristic
StoragTeoTteaml Dpeeravtiucree DRaisnsgiepation FR-5 Board, (1)
RΘJA
CJ
TJ
TSTG
Symb-o55l to +125 Max
PD
40
Uni t 120
- 65 to +175
-55 to +150
℃
P
℃
℃
TA=25oC
200 mW
Derate abovCeH2A5RoACCTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
FM120-MH
FM130-MH FM114.80-MH
0.50
FM150-mMHWF/MoC160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UN
Vo
MaximTumheArmvearalgReeRseisvetarsnecCeu, rJreunntcattion@tToAA=2m5b℃ient IR
R θJA
556
oC/W 0.5
mA
Rated TDoCtaBlloDckeivngicVeoDltaisgseipation @T A=125℃
PD
10
NOTESA: lumina Substrate, (2) TA=25 oC
200 mW
1- MeasDuererdaatet 1aMbHoZvean2d5aopCplied reverse voltage of 4.0 VDC.
2.4 mW/oC
2- ThermThaleRremsiastlaRnceesFisrotamnJcuen,ctJiounntoctAiomnbiteontAmbient
Junction and Storage Temperature
R θJA
Tj ,Tstg
417
-55 to +150
oC/W
oC
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page  
WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeACraE lMOPUuNrTpSoCHsOeTTTKYraBAnRsRiIEsRtoRErCsTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
SOT-23better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
• Silicon epitaxial planar chip, metal silicon junction.
.106(2.70)• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIM.U0M8R0A(2T.IN0G4S) AND ELECTRICAL CHARACTERISTICS
.070(1.78)Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
.003(0.08)
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12 13 14 15 16
18 10
115 120
VRRM
20
30
40
50
60
80 100 150 200 Vo
VRMS
14
21
28
35
42
56 70
105 140 Vo
VDC 20 30 40 50 60
80 100 150 200 Vo
.004(0.10)MAX.Maximum Average Forward Rectified Current
IO
1.0 Am
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30 Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
120
℃
P
Operating Temperature Range
Storage Temperature Range
.020T(ST0TJG.50)
-55 to +125
- 65 to +175
-55 to +150
℃
℃
.012(0.30)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
D@iTmA=e12n5℃sions in inches and (millimeters) 10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SA812SLT1.PDF ] | |
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