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Número de pieza | 2SA733 | |
Descripción | PNP General Purpose Amplifier | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA733 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
September 2009
1 TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5.0 V
IC Collector current
- Continuous
-500
mA
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
1
www.fairchildsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SA733.PDF ] |
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