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PDF 2N6515 Data sheet ( Hoja de datos )
| Número de pieza | 2N6515 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6515 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N6515
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
• Collector-Emitter Voltage: VCEO= 250V
• Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
250
250
6
500
625
150
-55 ~ 150
Unit
V
V
V
mA
m&&W
TO-92
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic
Symbol
Test Conditions
%CCoolllleeccttoorr--EBmasiteteBr rBeraekadkodwonwnVoVlotaltgaege
Emitter-Base Breakdown Voltage
Collector Cut-off Current
%EDmCitCteurrrCeuntt-oGffaCinurrent
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE (sat)
Base-Emitter Saturation Voltage
VBE (sat)
Collector-Base Capacitance
COB
Current Gain Bandwidth Product
fT
Base Emitter On Voltage
VBE(on)
s % Pulse Test: Pulse Width 300 , Duty Cycle 2%
IC=1mA, IB=0
}IC=100 , IE=0
}IE=10 , IC=0
VCB=150V, IE=0
VBE=5V, IC=0
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCB=20V, IE=0
f=1MHz
IC=10mA, VCE=20V
IC=100mA, VCE=10V
1.Emitter 2. Base 3. Collector
Min Typ
250
250
6
35
50
50
45
25
40
Max
50
50
300
220
0.3
0.35
0.5
1
0.75
0.85
0.9
6
200
2
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
pF
MHz
V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6515.PDF ] | |
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