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PDF 2N6517 Data sheet ( Hoja de datos )

Número de pieza 2N6517
Descripción High Voltage Transistors
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! 2N6517 Hoja de datos, Descripción, Manual

ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VCEO
VCBO
VEBO
Base Current
Collector Current –
Continuous
IB
IC
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage
Junction
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
2N6515
250
250
2N6517
2N6520
350
350
6.0
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
625 mW
5.0 mW/°C
1.5 Watts
12 mW/°C
–55 to +150
°C
Symbol Max Unit
RqJA
RqJC
200 °C/W
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N6515
2N6517, 2N6520
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
2N6515, 2N6517
2N6520
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
© Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
1
NPN
2N6515
2N6517
PNP
2N6520
Voltage and current are negative
for PNP transistors
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
NPN
1
EMITTER
COLLECTOR
3
2
BASE
PNP
1
EMITTER
Symbol
Min
Max Unit
V(BR)CEO
Vdc
250 –
350 –
V(BR)CBO
Vdc
250 –
350 –
V(BR)EBO
Vdc
6.0 –
5.0 –
Publication Order Number:
2N6515/D

1 page




2N6517 pdf
NPN 2N6515 2N6517 PNP 2N6520
1.0Ăk
700
500
td @ VBE(off) = 2.0 V
VCE(off) = 100 V
IC/IB = 5.0
300 TJ = 25°C
200
tr
100
70
50
30
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Turn–On Time – NPN 2N6515, 2N6517
1.0Ăk
700
500
td @ VBE(off) = 2.0 V
VCE(off) = -100 V
IC/IB = 5.0
300 TJ = 25°C
200 tr
100
70
50
30
20
10
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10 -ā20 -ā30 -ā50 -ā70 -100
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time – PNP 2N6520
10Ăk
7.0Ăk
5.0Ăk ts
3.0Ăk
2.0Ăk
1.0Ăk tf
700
500
300
200
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
100
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 14. Turn–Off Time – NPN 2N6515, 2N6517
2.0Ăk
ts
1.0Ăk
700
500 tf
300
200
100
70
50
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
30
20
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10 -ā20 -ā30 -ā50 -ā70 -100
IC, COLLECTOR CURRENT (mA)
Figure 15. Turn–Off Time – PNP 2N6520
http://onsemi.com
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