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PDF XL1225 Data sheet ( Hoja de datos )

Número de pieza XL1225
Descripción SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Fabricantes DC COMPONENTS 
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XL1225 Hoja de datos, Descripción, Manual
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
ML1225
XL1225
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 300 to 380 Volts
CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high
performance planar diffused PNPN devices.
They are intended for low cost, high volume
applications.
Pinning
1 = Cathode
2 = Gate
3 = Anode
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Peak Repetitive Off-State
Voltage(RGK=1KΩ)
ML1225
XL1225
On-State RMS Current(TC=40oC)
Peak Gate Current(10µs Max)
Gate Power Dissipation(20ms Max)
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
VDRM
IT(RMS)
IGM
PG(AV)
VGRM
TJ
TSTG
300
380
0.8
1
0.1
8
-40 to +125
-40 to +125
Unit
V
A
A
W
V
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500 Min
(12.70)
2oTyp
2oTyp
.050 Typ
(1.27)
.022(0.56)
.014(0.36)
(2.1.5040)Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5oTyp 5oTyp (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward
Off-State Blocking Current
TA=25oC
TA=125oC
Symbol
IDRM
Min
-
-
Typ Max
-5
- 100
Peak Forward On-State Voltage
-
VTM
-
- 1.4
- 2.2
Continuous DC Gate Trigger Current
IGT - - 200
Continuous DC Gate Trigger Voltage
VGT -
- 0.8
DC Holding Current
IH - - 5
DC Latching Current
IL - - 6
Critical Rate-of-Rise of Off-State Voltage
dv/dt
25
-
-
Critical Rate-of-Rise of Off-State Current
di/dt
30
-
-
Gate Controlled Delay Time
Tgd -
- 0.5
Thermal Resistance, Junction to Case
RθJC
100
-
-
Unit
µA
V
µA
V
mA
mA
V/µS
A/µS
µsec
oC/W
Test Conditions
VAK=Rated VDRM or VRRM
RGK=1K
ITM=0.4A Peak, TJ=25oC
ITM=0.8A Peak, TJ=25oC
VAK=7V DC, RL=100
VAK=7V DC, RL=100
RGK=1K, Gate Open
RGK=1K, Gate Open
VD=0.67VDRM, RGK=1K, TJ=125oC
IG=10mA, diG/dt=0.1A/µS, TJ=125oC
IG=10mA, diG/dt=0.1A/µS
-
Classification of IGT
Rank
AA
Range
ML1225
XL1225
10~18 µA
10~18 µA
AB
12~23 µA
12~23 µA
AC
17~28 µA
17~28 µA
AD
22~55 µA
22~55 µA
B
45~105 µA
45~105 µA
C
-
95~155 µA

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