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PDF C106 Data sheet ( Hoja de datos )
| Número de pieza | C106 | |
| Descripción | Thyristors | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Thyristors
isc Product Specification
C106
FEATURES
·Glassivated surface for reliability and uniformity
·Practical level triggering and holding characteristics
·Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation
Is important.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
PGM
PG(AV)
ITSM
Tj
Tstg
Repetitive peak off-state voltage
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
Peak gate power
Average gate power
Non-repetitive peak on-state current
Operating junction temperature
Storage temperature
MIN UNIT
400 V
400 V
2.5 A
4A
0.5 W
0.2 W
20 A
125 ℃
-40~+ 150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VRRM=400V
VRRM=400V, Tj= 125℃
VDRM=400V
VDRM=400V, Tj= 125℃
IGT Gate trigger current
VD= 6V; RL=100Ω, RGK=1KΩ
VTM On-state voltage
IT= 8A
IH Holding current
VD=24V, RGK=1KΩ, ITM=4A
VGT Gate trigger voltage
VD= 12V; RL=100Ω, RGK=1KΩ
MIN MAX UNIT
10
200
μA
10
200
μA
10 200 μA
1.75 V
5 mA
0.8 V
isc website：www.iscsemi.cn
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet C106.PDF ] | |
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