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PDF 2N7000 Data sheet ( Hoja de datos )
| Número de pieza | 2N7000 | |
| Descripción | N-Channel Enhancement Mode Power MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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 1. 60-V (D-S) MOSFET - Vishay  Hay una vista previa y un enlace de descarga de 2N7000 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high
speed applications such as switching regulators,
converters, solenoid and relay drives.
D
SEATING
PLANE
b1
TO-92
E
S1
Drain
Gate
Source
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
-Continuous
Drain Current
Power Dissipation
-Non-Repetitive (tp 50us)
-Continuous
-Pulsed
- TA=25oC
-Derate Above 25oC
Thermal Resistance, Junction-To-Ambient
Operating Junction and Storage Temperature Range
Max. Lead Temperature For Soldering Purposes,
1/16" From Case For 10 Seconds
Symbol
VDS
VGS
VGSM
ID
IDM
PD
RθJA
Tj, Tstg
TL
Ratings
60
±20
±40
200
500
0.35
2.8
357
-55~+150
300
Unit
V
V
V
mA
mA
W
mW/ oC
oC/W
oC
oC
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N7000.PDF ] | |
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