(PDF) IRFS830 Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	IRFS830
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	TAITRON
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No Preview Available ! 500V/3.1A N-Channel Power MOSFET (Discontinued) IRFS830 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=500V, ID=3.1A  RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 1 page Fig.3- Typical Saturation Characteristics IRFS830 SAMSUNG Fig.4- Maximum Safe Operation Area Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Fig.5- Maximum Effective Transient Thermal Impedance Junction-Case VS. Pulse Duration www.taitroncomponents.com Square Wave pulse Duration t1(S) Rev. A/PQ Page 5 of 10 5 Page

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PDF IRFS830 Data sheet ( Hoja de datos )