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Número de pieza | IRF630A | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | nELL | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF630A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SEMICONDUCTOR
IRF630 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(9A, 200Volts)
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These transistors can be operated directly from
integrated circuits.
FEATURES
RDS(ON) = 0.40Ω @ VGS = 10V
Ultra low gate charge(43nC max.)
Low reverse transfer capacitance
(CRSS = 80pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(IRF630A)
D
G
D
S
TO-263(D2PAK)
(IRF630H)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
9
200
0.400 @ VGS = 10V
43
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
TJ=25°C to 150°C
RGS=20KΩ
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IAR Repetitive avalanche current (Note 1)
EAR Repetitive avalanche energy(Note 1)
EAS Single pulse avalanche energy (Note 2)
IAR=9A, RGS=50Ω, VGS=10V
IAS=9A, L=4.6mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V,L=4.6mH,IAS=9A,RG=25Ω,starting TJ=25˚C
3.ISD ≤ 9A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
www.nellsemi.com
Page 1 of 7
VALUE
200
200
±20
9
5.7
36
9
7.4
250
5
75
0.6
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
1 page SEMICONDUCTOR
10
IRF630 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-²
10-₅
10-⁴
Single pulse
(Thermal response)
10-³
10-²
PDM
t1
t2
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.1 1 10
Rectangular Pulse Duration , t1 (seconds)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
VDS
L
RG
10V
tP
D.U.T.
lAS
0.01Ω
+
- VDD
A
BVDSS
lAS
VDD
Vary tp to obtain required IAS
www.nellsemi.com
Page 5 of 7
lD(t)
tp
VDS(t)
Time
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF630A.PDF ] |
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